sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:FGY75T120SWD
Data Manual:FGY75T120SWD.PDF
Brand:ON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
The FGY75T120SWD's new field-cutoff 7th generation IGBT technology and 7th generation diode in a 3-pin TP247 package provides optimal performance with low conduction and switching losses for efficient operation in a wide range of applications such as photovoltaics, uninterruptible power supplies (UPS), and energy storage systems (ESS).
Specification
Manufacturer: onsemi
Product Category: IGBT Transistors
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Maximum collector-emitter voltage VCEO: 1.2 kV
Collector-emitter saturation voltage: 1.68 V
Gate/Emitter Maximum Voltage: - 20 V, 20 V
Continuous collector current at 25 C: 150 A
Pd-power dissipation: 503 W
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Maximum continuous collector current Ic: 150 A
Gate-emitter leakage current: 400 nA
Applications
Boosters and inverters for photovoltaic systems
UPS
Energy storage systems
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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