sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistors
Brand:INFINEON
Particular Year:24+
Package:PG-TO252-3
Delivery Date:New and Original
Stock: 2000pcs
IGD03N120S7 is Hard-switching 1200 V, 3 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-252 package which offers low VCEsat to achieve very low conduction losses in target applications.
Features of IGD03N120S7
VCE = 1200 V
IC = 3 A
Low VCEsat = 2 V at Tvj = 150°C
Short circuit ruggedness 8 µs
Wide range of dv/dt controllability
Benefits of IGD03N120S7
Compact design for high volt. aux-supply
Reduced EMI min e-magnetic interference
Applications of IGD03N120S7
Industrial motor drives and controls
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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