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The STGB19NC60KDT4 is a high-performance insulated gate bipolar transistor (IGBT) belonging to the 600V IGBT with Trench Technology family. The chip integrates a 600V, 20A IGBT and a reverse parallel fast recovery diode in a D2PAK package. These devices are ultra high-speed IGBTs developed using advanced PowerMESH™ technology, which ensures an excellent trade-off between switching performance and low conduction behaviour.

Features - STGB19NC60KDT4

Low on-state voltage drop (VCE(sat))

Low CRES / CIES ratio (no cross-conductance inductance)

Short circuit withstand time 10 μs

IGBTs co-packaged with ultra-high speed diodes

Specification - STGB19NC60KDT4

Product Category: Insulated Gate Bipolar Transistors (IGBT)

Technology: Si

Package / Case: D2PAK-3

Mounting Style: SMD/SMT

Configuration: Single

Maximum collector-emitter voltage VCEO: 600 V

Collector-emitter saturation voltage: 2 V

Gate/Emitter Maximum Voltage: - 20 V, 20 V

Continuous collector current at 25 C: 35 A

Pd-power dissipation: 125 W

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Series: STGB19NC60KDT4

Maximum Continuous Collector Current Ic: 35 A

Height: 4.6 mm

Length: 10.4 mm

Application - STGB19NC60KDT4

High frequency inverters

Motor drives

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