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Service Telephone:86-755-83294757
Trade Name:UCC27200QDDARQ1
Data Manual:UCC27200QDDARQ1.pdf
Brand:TI
Particular Year:23+
Package:SOP-8
Delivery Date:New and Original
Stock: 5000pcs
The UCC27200QDDARQ1 high-frequency N-channel MOSFET driver includes a 120-V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows control of N-channel MOSFETs in half-bridge, full-bridge, double-switched forward and actively clamped forward converters. the low-side and high-side gate drivers are independently controlled with a matching time of 1ns between each other's on and off.
Attributes
Drive configuration Half bridge
Channel type Independent
Number of drivers 2
Gate type N-channel MOSFET
Voltage - Supply 8V ~ 17V
Logic Voltage - VIL, VIH 3V, 8V
Current - Peak Output (Pour In, Pull Out) 3A, 3A
Input Type Non-Inverting
High Side Voltage - Maximum (Bootstrap) 120 V
Rise/Fall Time (typical) 8ns, 7ns
Operating Temperature -40°C ~ 140°C (TJ)
Mounting Type Surface Mount Type
Package/Housing 8-PowerSOIC (0.154", 3.90mm wide)
Supplier Device Package 8-SO-PowerPad
Applications
Power supplies for telecom, datacom and commercial markets
Half-bridge applications and full-bridge converters
Isolated bus architectures
Dual-switched forward converters
Active clamped forward converters
High voltage synchronous buck converters
Class D audio amplifiers
Model
Brand
Package
Quantity
Describe
TI
VQFN-54
2000
600V 50mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode
TI
VQFN-54
2000
600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection
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