Welcome Here Shenzhen Mingjiada Electronics Co., Ltd.
sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NXH40B120MNQ1SNG
Data Manual:
NXH40B120MNQ1SNG.PDF
Brand:ON
Particular Year:23+
Package:MODULE
Delivery Date:New and Original
Stock: 1000pcs
The NXH40B120MNQ1SNG is a power module that includes a three-channel boost stage. The integrated SiC MOSFETs and SiC diodes reduce conduction and switching losses, enabling designers to achieve high efficiency and excellent reliability.
Features
1200 V 40 m SiC MOSFETs
Low reverse recovery and fast switching SiC diodes
1200 V bypass and anti-parallel diodes
Low inductance layout
Solderable pins
Thermistors
The device is Pb-free, halogen-free/brominated flame retardant-free and RoHS compliant
Typical Applications
Solar inverters
Uninterruptible Power Supplies
Model
Brand
Package
Quantity
Describe
ROHM
Module
1000
1200V, 567A, full SiC power module with built-in half-bridge trench MOS
ON
PIM-36
1000
4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC
ON
PIM-18
1000
10 mohm SiC M3S MOSFET Module, 1200 V, 2-PACK half-bridge topology, F1 package
ON
PIM-18
1000
8 mΩ SiC M3S MOSFET module, 1200 V, 2-PACK half-bridge topology, F1 package
ON
PIM-18
1000
8 mΩ SiC M3S MOSFET module, 1200 V, 2-PACK half-bridge topology, F1 package
Microchip
Module
1000
1200V, HPD, 3 Phase Bridge + Actuation Full-Options Hybrid Power Drive mSiC™ MOSFET Module
Microchip
SOT-227
1000
SiC MOSFET module N Channel 1200 V 55A (Tc) 245W (Tc) SOT-227 (ISOTOP®)
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A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
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E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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