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Service Telephone:86-755-83294757
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Product Picture
Model
Brand
Parameter Description
MOQ
Stock
Purchase Quantity
Unit Price
Operation
Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 650 V 39A (Tj) 165W TO 247-4L
Package:TO-247-4Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 650 V 30A (Tj) 134W TO 247-4L
Package:TO-247-4Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 650 V 30A (Tc) 134W TO 247N
Package:TO-247-3Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 24A (Tj) 134W TO 247-4L
Package:TO-247-4Product Description:Silicon Carbide (SiC) MOSFET N channel 1200 V 24A (Tc) 93W TO 263-7LA
Package:TO-263-7Product Description:Silicon Carbide (SiC) MOSFET N channel 750 V 51A (Tc) TO-263-7LA
Package:TO-263-7Product Description:Through Hole N Channel 200 V 45A (Tc) 2.23W (Ta), 40W (Tc) TO-220FM
Package:TO-220-3Product Description:600V IGBT Intelligent Power Module (IPM)
Package:HSDIP-25Product Description:600V IGBT Intelligent Power Module (IPM)
Package:HSDIP-25Product Description:600V IGBT Intelligent Power Module (IPM)
Package:HSDIP-25Product Description:600V IGBT Intelligent Power Module (IPM)
Package:HSDIP-25Product Description:Equipped with 600V IGBT Intelligent Power Module (IPM)
Package:HSDIP-25Product Description:Equipped with 600V IGBT Intelligent Power Module (IPM)
Package:HSDIP-25Product Description:Nano Cap™, EcoGaN™, 650V 150mΩ 2MHz, GaN HEMT Power Stage IC
Package:VQFN-46Product Description:1200V N-Channel 4-Pin Package SiC (Silicon Carbide) MOSFETs
Package:TO-247-4LProduct Description:1200V, 55A, 4-pin THD, Trench Structure Automotive SiC-MOSFETs
Package:TO-247-4LContact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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