sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:AIGB40N65H5ATMA1
Data Manual:AIGB40N65H5ATMA1.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-263-3
Delivery Date:New original
Stock: 2000pcs
AIGB40N65H5ATMA1 TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only.
Features
TRENCHSTOP™ 5 technology with low VCEsat, optimized as H5 variant (High Speed Variant) with softer switching behavior for easier design-in
650V break-down voltage, 50A nominal current
Very fast switching (up to 150kHz)
Automotive qualified in accordance to Infineon quality standards
Max junction temperature 175 °C
Highest efficiency
very low conduction losses
very low switching losses
Very low junction and case temperature
SMD D2PAK package for low assembly costs and higher power density
Extremely robust
Potential Applications
On-Board Charger (mainly in the PFC stage)
DC-DC or DC-AC
Auxiliary drive (e.g. Motor drive)
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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