sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:P-channel MOSFET
Brand:INFINEON
Particular Year:22+
Package:PG-SOT223
Delivery Date:New and Original
Stock: 3000pcs
The BSP613P is a P-channel enhancement mode small signal MOSFET from Infineon's SIPMOS® series, manufactured using trench (Trench) process technology. It is specifically designed for 60 V medium-voltage applications, 2.9 A-class load switching, reverse polarity protection, and high-side drive applications. The BSP613P is available in a PG-SOT223-4 (equivalent to SOT-223) surface-mount package and is AEC-Q101 certified, meeting automotive reliability requirements.
BSP613P Product Parameters
Channel Type: P-channel (Enhancement Mode)
Maximum Drain-Source Voltage (VDS): 60 V
Continuous Drain Current (ID): 2.9 A (Ta = 25°C)
Pulse Drain Current (IDM): 11.6 A
Gate-Source Voltage (VGS): ±20 V
Input Capacitance (Ciss): 715pF @ VDS = -25V
Gate Charge (Qg): 22nC @ VGS = -10V
Package: SOT-223-4 (with heat sink pad)
Compliance Standards: AEC-Q101, RoHS
BSP613P Features
Enhanced Mode
Normal Grade
Avalanche Rating
Fast Switching
dv/dt Rating
Lead-Free/Lead-Plated
RoHS Compliant, Halogen-Free
Automotive Standard Compliant
PPAP Supported
BSP613P Applications
Electronic Stability Control
Electric Power Steering (EPS)
Electric Vehicle Traction Inverter
Programmable Logic Controller (PLC)
Model
Brand
Package
Quantity
Describe
INFINEON
SOT-223-4
2000
60V P-Channel power MOSFET Transistors for automotive applications
ON
5-DFN
3000
Power MOSFET −60V, 64A, 14 mOhm, Single P-Channel, SO8-FL, Logic Level
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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