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ISO5851QDWRQ1 is a 5.7 kVRMS enhanced isolation gate driver for IGBTs and MOSFETs, featuring a pull-current capability of 2.5A and a sink-current capability of 5A. The input is powered by a single supply ranging from 3V to 5.5V. The output supports a power supply range of 15V to 30V. Two complementary CMOS inputs control the output state of the gate driver. A short propagation time of 76 ns ensures precise control of the output stage.

The built-in desaturation (DESAT) fault detection function identifies when the IGBT is in an overloaded state. When DESAT is detected, the gate driver output is pulled low to the VEE2 potential, immediately turning off the IGBT.

When a desaturation fault occurs, the device sends a fault signal through the isolation gate to pull the FLT output at the input end low and block the input of the isolator. The output state of FLT is latched and can be reset by a valid low-level pulse on the RST input.

ISO5851QDWRQ1 Characteristics

• Suitable for automotive electronics standards

• Meets the following results in accordance with the AEC-Q100 standard:

– Device temperature grade 1: Operating temperature range from -40°C to 125°C

– Device Human Body Model (HBM) classification grade 3A

– Device Charger Device Model (CDM) classification grade C6

• Minimum common-mode transient immunity (CMTI) of 100 kV/μs at VCM = 1500 V

• 2.5 A peak sink current and 5 A peak source current

• Transient propagation delay: 76 ns (typical), 110 ns (maximum)

• 2 A active Miller clamping

• Output short-circuit clamping

• Fault alarm via FLT when desaturation fault is detected, and reset via RST

• Input and output under-voltage lockout (UVLO) with ready (RDY) pin indication

• Active output pull-down feature, defaulting to low output level in case of low power supply or floating input

• Input power supply voltage: 3V to 5.5V

• 15V to 30V output driver power supply voltage

• CMOS-compatible inputs

• Suppresses input pulses and transient noise shorter than 20ns

• Withstands surge isolation voltage up to 12800VPK”

ISO5851QDWRQ1 Applications

• Isolated insulated-gate bipolar transistor (IGBT) and metal-oxide

semiconductor field-effect transistor (MOSFET) drivers:

– Hybrid electric vehicles (HEV) and electric vehicles (EV) power modules

– Industrial motor control drives

– Industrial power supplies

– Solar inverters

– Induction heating

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