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The APT50GN60BDQ3G is a 600V insulated gate bipolar transistor (IGBT) with an extremely low VCE(ON), making it highly suitable for low-frequency applications that require absolute minimum conductive loss.

Performance parameters

The main parameters of APT50GN60BDQ3G include:

Configuration: Single

The maximum collector-emitter voltage VCEO: 600 V

Collector-emitter saturation voltage: 1.45V

Maximum gate/emitter voltage: -30V, 30V

Continuous collector current at 25 C: 107 A

Pd- Power dissipation: 366 W

Minimum operating temperature: -55 ° C

Maximum operating temperature: + 175 ° C

Package/Box: TO-247-3

Installation style: Through Hole

Gate-emitter leakage current: 600 nA

Product type: IGBT Transistors

Application field

The APT50GN60BDQ3G is widely used in the following fields:

Electric power control

Frequency converter

Switching power supply

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