sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Single Transistor
Brand:INFINEON
Particular Year:25+
Package:PG-HDSOP-22
Delivery Date:New and original
Stock: 2000pcs
IMDQ75R007M2H is a CoolSiC™ MOSFET launched by Infineon, which is the second-generation product. It adopts silicon carbide (SiC) technology. Its main specifications include:
FET type: N-channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 840 V
Current at 25°C - continuous drain (Id) : 222A (Tc)
Drive voltage (maximum Rds On, minimum Rds On) : 15V, 20V
On-resistance (maximum value) at different ids and Vgs: 6.1 milliohms @ 131.5A, 20V
Vgs(th) (maximum value) at different ids: 5.6V @ 28.9mA
Gate charge (Qg) at different Vgs (maximum value) : 171 nC @ 18 V
Vgs (maximum value) : +23V, -7V
Input capacitance (Ciss) at different Vds (maximum value) : 5922 PPF @ 500 V
FET function: -
Power dissipation (maximum) : 789W (Tc)
Operating temperature: -55°C to 175°C (TJ)
Installation type: Surface mount type
Supplier device packaging: PG-HDSP-22
Applicable scenarios
Youdaoplaceholder0 solid state relay/isolator
Youdaoplaceholder0 static switch applications (such as fuses, circuit protection)
Youdaoplaceholder0 High-efficiency power supply systems (such as inverters, charging equipment)
The IMDQ75R007M2H enhances system stability while ensuring safety by optimizing the Crss/Ciss parameters and VGS(th) threshold.
Model
Brand
Package
Quantity
Describe
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 16 mΩ
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 25 mΩ
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 60 mΩ
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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A: You can inquire through the website, or by phone and email.
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A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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