sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Single Transistor
Brand:IXYS
Particular Year:25+
Package:TO-263-7L
Delivery Date:New and original
Stock: 2000pcs
The IXSA80N120L2-7 is an industrial-grade, single-switch SiC MOSFET with low loss and fast switching for high speed industrial switching mode power supplies.
Key Features
Low on-off loss : IXSA80N120L2-7 has a very low on-off loss, specifically 30mΩ.
Low grid drive power requirements : The grid drive voltage range is -3/+15 to 18V.
Low thermal management requirements : The low thermal management requirements of this MOSFET make it suitable for use in a variety of industrial applications.
Fast switching : provides high-speed switching, suitable for applications that require fast response.
High blocking voltage : can withstand 1200V high voltage.
Low input capacitance : The input capacitance Ciss is 3000pF, which helps to reduce the switching loss.
High junction temperature : The maximum virtual junction temperature is 175°C, suitable for use in high temperature environments.
IXSA80N120L2-7 SiC MOSFETs are suitable for the following applications:
Solar inverter
Switching mode power supply
Uninterruptible power supply (UPS)
Motor drive
DC/DC converter
Electric vehicle charging infrastructure
Induction heating
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IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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