sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Automotive MOSFET
Brand:INFINEON
Particular Year:25+
Package:PG-TO263-3
Delivery Date:New and Original
Stock: 5000pcs
IPB120N06S4-03: 60V, OptiMOS™ -T2 Automotive MOSFET Transistor, PG-TO263-3
IPB120N06S4-03 Specifications:
Product Type: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: D2PAK-3 (TO-263-3)
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 120 A
Rds On - Drain-Source On-Resistance: 2.3 mOhms
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th-Gate-Source Threshold Voltage: 2 V
Qg-Gate Charge: 160 nC
Minimum Operating Temperature: -55 °C
Maximum Operating Temperature: +175 °C
Power Dissipation (Pd): 167 W
Channel Mode: Enhancement
Series: OptiMOS-T2
Transistor Type: 1 N-Channel
Typical Turn-off Delay Time: 80 ns
Typical Turn-on Delay Time: 40 ns
IPB120N06S4-03 Product Features:
N-Channel - Enhancement Mode
Compliant with automotive AEC Q101 standard
MSL1 with maximum reflow temperature up to 260°C peak
Operating temperature up to 175°C
100% Avalanche tested
PPAP-compliant device
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TO263-3
5000
Automotive MOSFET — 100V, OptiMOS™-T power transistor, PG-TO263-3
INFINEON
PG-TO263-7
5000
Automotive MOSFET — 60V, OptiMOS™ -T2 power transistor, PG-TO263-7
INFINEON
PG-TO252-3
5000
100V, OptiMOS™-T2 N-channel automotive MOSFET transistor, PG-TO252-3
INFINEON
PG-TO252-3
5000
60V, OptiMOS™ -T2 Series Automotive MOSFET Transistor, PG-TO252-3
INFINEON
PG-TDSON-8
5000
100V, OptiMOS™-T2 dual N-channel automotive MOSFET transistor, PG-TDSON-8
INFINEON
PG-TDSON-8
5000
60V, Dual N-Channel, OptiMOS ™ -T2 Automotive MOSFET Transistor, PG-TDSON-8
INFINEON
PG-HSOF-8
5000
120V, OptiMOS™ 5 Automotive Grade MOSFET Transistor, PG-HSOF-8
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A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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