sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Modules
Brand:INFINEON
Particular Year:24+
Package:Module
Delivery Date:New and original
Stock: 2000pcs
BSM150GB120DN2 is an IGBT module 1200V 150A DUAL developed by Infineon with the following features:
• Half bridge
• Includes fast continuous current diodes
• Package with insulated metal base plate
Specifications of BSM150GB120DN2
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector-emitter maximum voltage VCEO: 1.2kV
Collector-emitter saturation voltage: 2.5 V
Continuous collector current at 25 C: 210 A
Grid-emitter leakage current: 320 nA
Pd- Power dissipation: 1.25kW
Package/box: Half Bridge2
Operating temperature: -40 °C to + 150°C
Package: Tray
Trademark: Infineon Technologies
Height: 30 mm
Length: 106.4 mm
Maximum grid/emitter voltage: 20 V
Installation style: Screw Mount
Product type: IGBT Modules
Model
Brand
Package
Quantity
Describe
ON
PIM60
1000
IGBT module grooved field-stop three-stage inverter 1050V 429A 1080W base installation
ON
PIM60
1000
IGBT module grooved field-stop three-phase inverter 1050 V 429 A 1080 W base installation
ON
PIM50
1000
IGBT module grooved field-stop three-stage inverter 1000 V 209 A 497 W base installation 50PIM
ON
PIM58
1500
IGBT module grooved field-stop three-stage inverter 1000 V 210 A 503 W base installation 58PIM
ST
SDIP-25L
2300
SLLIMM™ small low-loss intelligent molded module IPM, 3-phase inverter, 10 A, 600 V short-circuit rugged IGBT
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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