sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IXYP60N65A5
Data Manual:IXYP60N65A5.pdf
Brand:IXYS
Particular Year:23+
Package:TO-220-3
Delivery Date:New original
Stock: 3000pcs
The 650V IXYP60N65A5 XPT™ GenX5™ grooved IGBT was developed using proprietary XPT thin landscape technology and the advanced 5th Generation (GenX5) grooved IGBT process. The device has the characteristics of low thermal resistance, low energy consumption, fast switching, low trailing current and high current density. The XPT GenX5 Trench IGBT features a square reverse bias Safe Working area (RBSOA) with a breakdown voltage of up to 650V, making it ideal for unbuffered hard switching applications.
Device Specifications:
IGBT type: PT
Voltage-emitter breakdown (Max) : 650 V
Current-collector (Ic) (Max.) : 134 A
Current-collector pulse (Icm) : 260 A
Vce(on) (Max.) for different Vge and Ic: 1.35V@15V, 36A
Power - Max. : 395 W
Switching power: 600µJ (on), 1.45mJ (off)
Input type: Standard
Grid charge: 128 nC
Td (On/off) value at 25°C: 28ns/230ns
Test conditions: 400V, 36A, 5 ohms, 15V
Operating temperature: -55°C ~ 175°C (TJ)
Installation type: Through hole
Package/housing: TO-220-3
Supplier Device Package: TO-220 (IXYP)
Basic product number: IXYP60
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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