sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IXBH10N300HV
Data Manual:IXBH10N300HV.pdf
Brand:IXYS
Particular Year:23+
Package:TO-263
Delivery Date:New original
Stock: 3000pcs
The IXBH10N300HV is a 3000V high voltage reverse pilot (BiMOSFET™) IGBT device that combines the benefits of MOSFET and IGBT. Both the saturation voltage of these high-voltage devices and the forward voltage drop of the built-in diode have a positive voltage temperature coefficient, making them ideal for parallel operation. The "free" built-in diode is used as a protection diode to provide an alternative path for the inductive load current during device shutdown, preventing damage to the device from high Ldi/dt voltage transients.
Device Specifications:
IGBT type: -
Voltage-emitter breakdown (Max) : 3000 V
Current-collector (Ic) (Max.) : 34 A
Current-collector pulse (Icm) : 88 A
Vce(on) (Max.) for different Vge and Ic: 2.8V @ 15V, 10A
Power - Maximum: 180 W
Switching energy: -
Input type: Standard
Grid charge: 46 nC
Td (On/off) value at 25°C: 36ns/100ns
Test conditions: 960V, 10A, 10ohms, 15V
Reverse recovery time (trr) : 1.6µs
Operating temperature: -55°C ~ 150°C (TJ)
Mounting type: Surface mount type
Package/housing: TO-263-3, D²Pak (2 leads + connectors), TO-263AB
Supplier device package: TO-263HV
Basic product number: IXBH10
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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