sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IXYA20N120A4HV
Data Manual:IXYA20N120A4HV.pdf
Brand:IXYS
Particular Year:23+
Package:TO-263
Delivery Date:New original
Stock: 3000pcs
The IXYA20N120A4HV grooved 1200V XPT™ GenX4™ IGBT was developed using proprietary XPT thin wafer technology and the most advanced fourth generation (GenX4™) grooved IGBT process. The transistor has the characteristics of low thermal resistance, low energy consumption, fast switching, low trailing current and high current density. This device offers excellent durability under switching and short circuit conditions. Typical applications include battery chargers, lamp ballzers, motor drivers, power inverters, power factor correction (PFC) circuits, switching mode power supplies, uninterruptible power supplies (UPS), and welders.
Product Specifications:
IGBT type: PT
Voltage-emitter breakdown (Max.) : 1200 V
Current - Collector (Ic) (Max) : 80 A
Current-collector pulse (Icm) : 135 A
Vce(on) (Max.) for different Vge and Ic: 1.9V @ 15V, 20A
Power - Max: 375 W
Switching energy: 3.6mJ (on), 2.75mJ (off)
Input type: Standard
Grid charge: 46 nC
Td (On/off) at 25°C: 12ns/275ns
Test conditions: 800mV, 20A, 10 ohms, 15V
Reverse recovery time (trr) : 54 ns
Operating temperature: -55°C ~ 175°C (TJ)
Mounting type: Surface mount type
Package/housing: TO-263-3, D²Pak (2 leads + connectors), TO-263AB
Supplier device package: TO-263HV
Basic product number: IXYA20
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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