sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NTH4L020N090SC1
Data Manual:NTH4L020N090SC1.PDF
Brand:ON
Particular Year:23+
Package:TO-247-4
Delivery Date:New and Original
Stock: 2000pcs
ON Semiconductor's NTH4L020N090SC1 silicon carbide (SiC) MOSFETs offer superior switching performance and higher reliability than silicon devices. The onsemi MOSFETs have low on-resistance and are available in a compact chip size that ensures low capacitance and low gate charge. The resulting system benefits include higher efficiency, faster operating frequency, higher power density, lower EMI and smaller system size.
Features
Typical RDS(on) = 20mΩ at VGS = 15V
Typical RDS(on) at VGS = 18V = 16mΩ
Ultra-low gate charge (QG(tot) = 196nC)
Low effective output capacitance (Coss = 296pF)
100% UIL tested
The device is halogen free, RoHS compliant (7a exempt) and lead-free 2LI (secondary interconnect)
Applications
UPS
DC-DC converters
Boost inverters
Model
Brand
Package
Quantity
Describe
Wolfspeed
TO-247-3
2000
N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
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