sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:WeEn
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 2000pcs
WNSCM160120W Silicon Carbide MOSFET is packaged in a 3-pin TO247 plastic package, specifically designed for high-frequency, high-efficiency systems.
WNSCM160120W Features and Benefits
• Low on-resistance
• High switching speed
• 0V gate turn-off voltage, simplifying gate drive
• 100% UIS test passed
• Easy to parallel
• Controlled dV/dt, optimised electromagnetic interference (EMI)
• Reduced thermal requirements
• RoHS compliant
WNSCM160120W Product Attributes
FET Type: N-channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 1200 V
Current at 25°C - Continuous Drain (Id): 24A (Ta)
Drive Voltage (Maximum Rds On, Minimum Rds On): 20V
On-Resistance at Different Id and Vgs (Maximum): 196 mΩ @ 10A, 20V
Vgs(th) at different Id (maximum): 4.5 V @ 3 mA
Gate charge (Qg) at different Vgs (maximum): 35 nC @ 20 V
Vgs (maximum): +25 V, -10 V
Input capacitance (Ciss) at different Vds (maximum): 736 pF @ 1000 V
Power dissipation (maximum): 155W (Ta)
Operating temperature: -55°C to 175°C (TJ)
Mounting type: Through-hole
WNSCM160120W Application areas
• Switch-mode power supplies
• Uninterruptible power supplies (UPS)
• Solar string inverters and solar optimisers
• Electric vehicle chargers
• Motor drivers
Model
Brand
Package
Quantity
Describe
Wolfspeed
TO-247-3
2000
N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
Wolfspeed
TO-247-3
2000
N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
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WeEn Semiconductors Technology Co., Ltd. was registered on August 5, 2015, with its operation centre in Shanghai, wholly-owned subsidiaries and branches, including a chip production base in Jilin, a subsidiary in Hong Kong, product and R&D centres…
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