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sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Transistors
Brand:ST
Particular Year:25+
Package:HU3PAK-7
Delivery Date:New and Original
Stock: 2000pcs
SCT011HU75G3AG silicon carbide Power MOSFET device has been developed using ST's advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Feature Of SCT011HU75G3AG
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Applications Of SCT011HU75G3AG
DC/DC converter for EV/HEV
Main inverter (electric traction)
On board charger (OBC)
Model
Brand
Package
Quantity
Describe
Wolfspeed
TO-247-3
2000
N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
Wolfspeed
TO-247-3
2000
N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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