sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistor
Brand:INFINEON
Particular Year:24+
Package:TO-247-4
Delivery Date:New and Original
Stock: 3000pcs
IGZ50N65H5: 650V, 85A, 273W, TrenchStop™ 5 IGBT Transistor, TO-247-4
Model: IGZ50N65H5
Package: TO-247-4
Type: TrenchStop™ 5 IGBT Transistor
IGZ50N65H5 - Product Spec:
Series: TrenchStop™ 5
IGBT Type: Trench
Voltage - Collector Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 85 A
Current - Collector Pulse (Icm): 200 A
Vce(on) at varying Vge, Ic (max): 2.1V @ 15V, 50A
Power - Max: 273 W
Switching Energy: 410µJ (on), 190µJ (off)
Input Type: Standard
Gate Charge: 109 nC
Td (on/off) value at 25°C: 20ns/250ns
Test Conditions: 400V, 25A, 12 Ohm, 15V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package/Housing: TO-247-4
Supplier Device Package: PG-TO247-4
IGZ50N65H5 - Feature Description:
Very low control inductance loop
Emitter pin for driver feedback
Same collector-emitter creepage distance as standard TO-247 package
20% lower total switching losses than TO-247 packages using the same technology
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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