sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistors
Brand:ST
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Original
Stock: 6000pcs
The latest STGWA40HP65FB2 IGBT 650 V HB2 series represents the development of an advanced proprietary trench gate field termination structure. Due to better VCE (saturation) characteristics at low current values, the HB2 series is optimized in terms of conduction and also reduces switching energy. A diode for protection purposes only is packaged in anti-parallel with the IGBT. As a result, this product is specifically designed to maximize efficiency in a variety of fast applications.
Function
Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V (typical) @ IC = 40 A
Co-packaged protection diode
Minimal tail current
Tight parameter distribution
Low thermal resistance
Positive VCE (saturation) temperature coefficient
Product Properties
Manufacturer: STMicroelectronics
Product Category: Insulated Gate Bipolar Transistors (IGBTs)
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Maximum collector-emitter voltage VCEO: 650 V
Collector-emitter saturation voltage: 1.55 V
Gate/Emitter Maximum Voltage: - 20 V, 20 V
Continuous collector current at 25 C: 72 A
Pd-power dissipation: 227 W
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Maximum continuous collector current Ic: 72 A
Gate-emitter leakage current: 250 nA
Factory Package Quantity: 600
Unit weight: 6.100 g
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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