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The NVHL1000N170M1 silicon carbide (SiC) MOSFET is a 1700V M1 planar device optimised for fast switching applications. The planar technology provides reliable operation with the gate in negative gate voltage drive and turn-off spikes. This N-channel ElteSiC MOSFET offers best performance when driven by a 20V gate, but can also be used with an 18V gate drive.

Features

• Typ. RDS(on) = 960 m @ VGS = 20 V

• Ultra Low Gate Charge (QG(tot) = 14 nC)

• High Speed Switching with Low Capacitance (Coss = 11 pF)

• 100% Avalanche Tested

• AEC−Q101 Qualified and PPAP Capable

Typical Applications

• Flyback Converter

Specifications

FET Type: N-Channel  

Technology: SiC (Silicon Carbide Junction Transistor)  

Drain-source voltage (Vdss): 1700 V  

Current at 25°C - Continuous Drain (Id): 4.2A (Tc)  

Drive Voltage (Max Rds On, Min Rds On): 20V  

On Resistance (Max) at Different Id, Vgs: 1.43 Ohm @ 2A, 20V  

Vgs(th) at different Id (max): 4.3V @ 640µA  

Gate Charge (Qg) (Max) at Vgs: 14 nC @ 20 V  

Vgs (max): +25V, -15V  

Input capacitance (Ciss) at different Vds (max): 150 pF @ 1000 V  

Power Dissipation (Max) 48W (Tc)  

Operating Temperature: -55°C ~ 175°C (TJ)  

Grade: Automotive Grade  

Qualification: AEC-Q101  

Mounting Type: Through Hole  

Supplier Device Package: TO-247-3 

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