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The ON Semiconductor NVHL015N065SC1 Silicon Carbide MOSFETs feature N-channel for high efficiency, faster operating frequency, higher power density, lower EMI, and smaller system size.The NVHL015N065SC1 MOSFETs feature low on-resistance and a compact die size, which ensures low capacitance and gate charge.

Features

RDS(on)= 12mΩ (at VGS= 18V)

RDS(on) = 15mΩ (at VGS= 15V)

Drain-source voltage: 650V

Ultra-low gate charge (QG(tot)= 283nC)

High-speed switching, low capacitance (Coss= 430pF)

Product Attributes

FET Type: N-Channel  

Technology: MOSFET (Metal Oxide)  

Drain-Source Voltage (Vdss): 650 V  

Current at 25°C - Continuous Drain (Id): 163A (Tc)  

Drive Voltage (Max Rds On, Min Rds On): 15V, 18V  

On Resistance (Max) at Different Id, Vgs: 18 mOhm @ 75A, 12V  

Vgs(th) at different Id (max): 4.3V @ 25mA  

Gate Charge (Qg) at Vgs (max): 283 nC @ 18 V  

Vgs (max): +22V, -8V  

Input capacitance (Ciss) at different Vds (max): 4790 pF @ 325 V    

Power Dissipation (Max): 643W (Tc)  

Operating Temperature: -55°C ~ 175°C (TJ)  

Grade: Automotive Grade  

Qualification: AEC-Q101  

Mounting Type: Through Hole  

Supplier Device Package: TO-247-3 

Applications

Automotive on-board chargers

Automotive DC/DC converters (for EV/HEV)

Automotive Traction Inverters

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