Welcome Here  Shenzhen Mingjiada Electronics Co., Ltd.

The ON Semiconductor NVH4L095N065SC1 silicon carbide (SiC) MOSFETs feature advanced technology for better switching performance and reliability. Featuring low on-resistance and a compact die size, it reduces capacitance and gate charge. The device also offers high efficiency, fast operation, higher power density, lower EMI and smaller system size.

Specification

Product Category: MOSFETs

Technology: SiC

Mounting Style: Through Hole

Package / Case: TO-247-4

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds-Drain-source breakdown voltage: 650 V

Id-Continuous drain current: 31 A

Rds On-drain on-resistance: 105 mOhms

Vgs - gate-source voltage: - 5 V, + 18 V

Vgs th - gate-source threshold voltage: 4.3 V

Qg - gate charge: 50 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-power dissipation: 64 W

Channel mode: Enhancement

Trade Name: EliteSiC

Series: NVH4L095N065SC1

Fall time: 9 ns

Forward transconductance - min: 6.9 S

Product: Mosfets

Rise Time: 12 ns

Transistor Type: 1 N-Channel

Typical Off Delay Time: 20 ns

Typical turn-on delay time: 8 ns

Typical Applications

In-vehicle chargers

On-board DC/DC converters for electric/hybrid vehicles

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