Welcome Here Shenzhen Mingjiada Electronics Co., Ltd.
sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:ON
Particular Year:24+
Package:Die
Delivery Date:New and Original
Stock: 1000pcs
NTCR013N120M3S 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Features
Excellent FOM [ = Rdson * Eoss ]
Ultra Low Gate Charge (QG(tot) = 254 nC)
High Speed Switching with Low Capacitance (Coss = 262 pF)
15V to 18V Gate Drive
New M3S technology: 13 mohm RDS(ON) with low Eon and Eoff losses
100% Avalanche Tested
Halide Free and RoHS Compliant
Die ( sawn on foil )
Applications
Solar Inverters
Electric Vehicle Charging Stations
Uninterruptible Power Supplies (UPS)
Energy Storage Systems
Switch Mode Power Supplies (SMPS)
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
ST
HiP247-3
3000
1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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