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Trade Name:Silicon Carbide (SiC) MOSFET
Brand:ON
Particular Year:24+
Package:TO-247-4
Delivery Date:New and Original
Stock: 5000pcs
The ON Semiconductor NVH4L025N065SC1 silicon carbide (SiC) MOSFET offers excellent switching performance and higher reliability than silicon. The ON NVH4L025N065SC1 features low on-resistance in a compact die size that ensures low capacitance and low gate charge. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and small system size.
Features
- Typical RDS(on) = 19 m @ VGS = 18 V
- Typical RDS(on) = 25 m @ VGS = 15 V
- Ultra-low gate charge (QG(tot) = 164 nC)
- Low capacitance (Coss = 278 pF)
Typical Applications
- Automotive On-Board Chargers
- On-board DC/DC converters for electric/hybrid vehicles
NVH4L025N065SC1 Product Attributes
Product Category: MOSFETs
Technology: SiC
Mounting Style: Through Hole
Package / Case: TO-247-4
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds-Drain-source breakdown voltage: 650 V
Id-Continuous drain current: 99 A
Rds On-drain on-resistance: 28.5 mOhms
Vgs - gate-source voltage: - 8 V, + 22 V
Vgs th - gate-source threshold voltage: 4.3 V
Qg - gate charge: 164 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Pd-Power dissipation: 348 W
Channel mode: Enhancement
Trade Name: EliteSiC
Series: NVH4L025N065SC1
Configuration: Single
Fall time: 8 ns
Forward transconductance - min: 27 S
Rise Time: 19 ns
Typical turn-off delay time: 32 ns
Typical Turn-On Delay Time: 17 ns
Model
Brand
Package
Quantity
Describe
Wolfspeed
TO-247-3
2000
N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
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