sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistor
Brand:ST
Particular Year:24+
Package:D2PAK-3
Delivery Date:New and original
Stock: 3000pcs
The STGB30H65DFB2 is A grooved gate field cutoff 650 V, 30 A high speed HB2 series IGBT in a D2PAK package.
The ST 650V HB Series grooved gate Field Termination IGBT is an IGBT developed using an advanced, patented grooved gate and field termination structure. These devices achieve the best compromise between conduction and switching losses, maximizing the efficiency of any frequency converter.
Features
Maximum junction temperature :TJ = 175°C
Low VCE(sat) = 1.65V (typical value.) @ IC = 30 A
Super fast soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Applications
weld
Power factor correction
Uninterrupted power supply
Solar inverter
recharger
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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