sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistor
Brand:ST
Particular Year:24+
Package:D2PAK-3
Delivery Date:New and original
Stock: 3000pcs
The STGB30H65DFB2 is A grooved gate field cutoff 650 V, 30 A high speed HB2 series IGBT in a D2PAK package.
The ST 650V HB Series grooved gate Field Termination IGBT is an IGBT developed using an advanced, patented grooved gate and field termination structure. These devices achieve the best compromise between conduction and switching losses, maximizing the efficiency of any frequency converter.
Features
Maximum junction temperature :TJ = 175°C
Low VCE(sat) = 1.65V (typical value.) @ IC = 30 A
Super fast soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Applications
weld
Power factor correction
Uninterrupted power supply
Solar inverter
recharger
Model
Brand
Package
Quantity
Describe
ST
D2PAK
5000
Trench gate field-stop 650 V, 30 A low-loss M series IGBT in a D²PAK package
IXYS
TO-220-3
5000
650V, Auroral Transmission IGBT Transistor for 20-60kHz Switching, TO-220-3
IXYS
TO-247-3
5000
900V, 165A, High Speed IGBT Transistor for 20-50 kHz Switching, TO-247-3
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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