sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistor
Brand:ST
Particular Year:24+
Package:D2PAK-3
Delivery Date:New and original
Stock: 3000pcs
The STGB30H65DFB2 is A grooved gate field cutoff 650 V, 30 A high speed HB2 series IGBT in a D2PAK package.
The ST 650V HB Series grooved gate Field Termination IGBT is an IGBT developed using an advanced, patented grooved gate and field termination structure. These devices achieve the best compromise between conduction and switching losses, maximizing the efficiency of any frequency converter.
Features
Maximum junction temperature :TJ = 175°C
Low VCE(sat) = 1.65V (typical value.) @ IC = 30 A
Super fast soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Applications
weld
Power factor correction
Uninterrupted power supply
Solar inverter
recharger
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
1000
IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L
ON
TO-247-3
1000
IGBT – Power, Single, N-Channel, Field Stop VII (FS7), SCR, TO247-3L
ON
TO-247-4
1000
IGBT – Power, Single, N-Channel, Field Stop VII (FS7), SCR, TO247-4L
IXYS
TO-247HV-3
3000
High voltage IGBT transistor 2500 V 29 A 280 W through hole TO 247HV
ST
TO-247-3
3222
IGBT trench field cut-off 650 V 80 A 283 W through hole TO-247 long lead
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