sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT transistor
Brand:ST
Particular Year:24+
Package:SMD
Delivery Date:New and original
Stock: 3222pcs
The STG200G65FD8AG is an IGBT developed using an advanced proprietary grooved gate field cutoff structure. The device is a member of the M-series IGBTs and represents the best balance between inverter system performance and efficiency, where low loss and short circuit functions are critical. In addition, the positive VCE (sat) temperature coefficient and tight parameter distribution make parallel operation safer.
Product attribute
IGBT type: trench type field cut-off
Voltage-emitter breakdown (Max) : 650 V
Current - Collector (Ic) (Max) : 200 A
Current-collector pulse (Icm) : 600 A
Vce(on) (Max.) for different Vge and Ic: 1.8V @ 15V, 200A
Switching energy: 5.34mJ (on), 6.23mJ (off)
Input type: Standard
Grid charge: 701 nC
Td (On/off) at 25°C: 66.2ns/442.7ns
Test conditions: 400V, 200A, 4.7ohms, 15V
Operating temperature: -40°C ~ 175°C (TJ)
Class: Automobile class
Qualification: AEC-Q101
Mounting type: Surface mount type
Package/shell: SMD
Model
Brand
Package
Quantity
Describe
ST
TO-247-3
3222
IGBT trench field cut-off 650 V 80 A 283 W through hole TO-247 long lead
INFINEON
TO-247-4
1000
650V, 120A IGBT with anti-parallel diode in TO-247-4 package
INFINEON
TO-263-3
1000
IGBT Trench Field Stop 650V 62A 188W Surface Mount PG-TO263-3
INFINEON
TO-263-3
1000
IGBT Trench Field Stop 650V 55A 188W Surface Mount PG-TO263-3
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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