sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT transistor
Brand:ST
Particular Year:24+
Package:TO-247-3
Delivery Date:New and original
Stock: 3222pcs
The STGWA40H65FB is an IGBT developed using ST's proprietary grooved gate field cutoff structure. The device is part of the new HB family of IGBTs and represents the best compromise between conduction and switching losses to maximize the efficiency of any inverter. In addition, the slightly positive VCE (sat) temperature coefficient and very tight parameter distribution make parallel operation safer.
Product attribute
IGBT type: trench type field cut-off
Voltage-emitter breakdown (Max) : 650 V
Current - Collector (Ic) (Max) : 80 A
Current-collector pulse (Icm) : 160 A
Vce(on) (Max.) for different Vge and Ic: 2V@15V, 40A
Power - Max. : 283 W
Switching power: 498µJ (on), 363µJ (off)
Input type: Standard
Grid charge: 210 nC
Td (On/off) value at 25°C: 40ns/142ns
Test conditions: 400V, 40A, 5 ohms, 15V
Operating temperature: -55°C ~ 175°C (TJ)
Installation type: Through hole
Package/housing: TO-247-3
Supplier device package: TO-247 long lead
Basic product number: STGWA40
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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