sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NVBG080N120SC1
Data Manual:NVBG080N120SC1.PDF
Brand:ON
Particular Year:23+
Package:D2PAK-7
Delivery Date:New and Original
Stock: 5000pcs
NVBG080N120SC1 Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mΩ , 1200 V, M1, D2PAK−7L
Overview
EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features
• Typ. RDS(on)= 80 m
• Ultra Low Gate Charge (Typ. QG(tot) = 56 nC)
• Low Effective Output Capacitance (Typ. Coss = 79 pF)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC-DC Converter for EV/HEV
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
3000
650V, 25mohm, N-Channel - EliteSiC, Silicon Carbide (SiC) MOSFET Transistor
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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