sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IXA33IF1200HB
Brand:IXYS
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Orignal
Stock: 1000pcs
The IXA33IF1200HB high-speed IGBTs are high-speed, high-gain 1200V insulated gate bipolar transistors.The 1200V XPT high-speed IGBTs have high current ratings (105A to 160A, Tc = 25°C) and are optimised for reduced switching losses in high-voltage applications requiring hard switching frequencies up to 50kHz.
Product Attributes
IGBT Type: PT
Voltage - Collector Breakdown (max): 1200 В
Current - Collector (Ic) (max): 58 A 58 A
Vce (conduction) at different Vge, Ic (max): 2.1V @ 15V, 25A
Power - Max: 250 W
Switching Energy: 2.5 mJ (On), 3 mJ (Off)
Input Type: Standard
Gate charge 76 nK
Test Conditions 600 V, 25 A, 39 Ohms, 15 V
Reverse Recovery Time (trr): 350 ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package/Housing: TO-247-3
Supplier Device Package: TO-247AD
Applications
● High frequency inverters
● Uninterruptible power supplies
● Motor drives
● SMPS
● PFC circuits
● Battery chargers
● Welding machines
● Lamp ballasts
Model
Brand
Package
Quantity
Describe
ROHM
TO-247-3
1000
IGBT with fluted cut-off field 1200 V 50 A 395 W through-hole TO-247N
INFINEON
TO-247-4
1000
IGBT Grooved Field Cutoff 650 V 74 A 250 W Through Hole PG-TO247-4-3
ROHM
TO-247-3
1000
IGBT Trench Type Field Cutoff 650 V 96 A 254 W Through Hole TO-247N
INFINEON
PG-TO247-3
1000
IGBT Grooved field cut-off 650 V 80 A 333 W Through-hole PG-TO247-3
ROHM
TO-3PFM
1000
IGBT Trench Type Field Cutoff 650 V 45 A 94 W Through Hole TO-3PFM
ROHM
TO-3PFM
1000
IGBT Trench Type Field Cutoff 650 V 45 A 89 W Through Hole TO-3PFM
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
IXTP160N10T
IXTP160N10T Description:IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low-voltage/high-current applications that require extremely low RDS(ON), resulting in very low power dissipation. In addition, they operate over a wide range of juncti…MCB20P1200LB-TUR
MCB20P1200LB-TUR is N-Channel 1200V SiC MOSFET Module.SpecificationsProduct: Power MOSFET Modules Type: Half-Bridge Module Technology: SiC Vgs - Gate-Source Voltage: - 20 V, + 20 V Minimum Operating Temperature: - 40 C Maximum Operating Temperature: +…IXFN50N120SIC
IXFN50N120SIC is a N-Channel 1200V 47A SiC MOSFET Module.SpecificationsType: HiperFET Technology: SiC Vgs - Gate-Source Voltage: - 20 V, + 20 V Mounting Style: Screw Mount Package/Case: SOT-227-4 Minimum Operating Temperature: - 55 C Maximum Operating…IXYH8N250CHV
The IXYH8N250CHV is A 2500 V 29 A high voltage IGBT series developed using proprietary XPT™ thin wafer technology and the most advanced IGBT process, featuring low thermal resistance, low tail current, low energy loss and fast switching.With the posi…IXGX320N60B3
The IXGX320N60B3 is A 600 V 500 A medium frequency IGBT with PT (punch through) production using the HDMOS IGBT process.The 600V GenX3™ is optimized for high-current applications that require soft switching frequencies up to 200 kHz and hard switchin…IXBK55N300
The IXBK55N300 is a 3 kV 130A ultra-high voltage series IGBT in the TO-264-3 package.BiMOSFET has the advantages of both MOSFET and IGBT. With its non-epitaxial structure and new manufacturing process, BiMOSFET has been a huge success. This high volta…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: