sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IXA33IF1200HB
Brand:IXYS
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Orignal
Stock: 1000pcs
The IXA33IF1200HB high-speed IGBTs are high-speed, high-gain 1200V insulated gate bipolar transistors.The 1200V XPT high-speed IGBTs have high current ratings (105A to 160A, Tc = 25°C) and are optimised for reduced switching losses in high-voltage applications requiring hard switching frequencies up to 50kHz.
Product Attributes
IGBT Type: PT
Voltage - Collector Breakdown (max): 1200 В
Current - Collector (Ic) (max): 58 A 58 A
Vce (conduction) at different Vge, Ic (max): 2.1V @ 15V, 25A
Power - Max: 250 W
Switching Energy: 2.5 mJ (On), 3 mJ (Off)
Input Type: Standard
Gate charge 76 nK
Test Conditions 600 V, 25 A, 39 Ohms, 15 V
Reverse Recovery Time (trr): 350 ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package/Housing: TO-247-3
Supplier Device Package: TO-247AD
Applications
● High frequency inverters
● Uninterruptible power supplies
● Motor drives
● SMPS
● PFC circuits
● Battery chargers
● Welding machines
● Lamp ballasts
Model
Brand
Package
Quantity
Describe
ROHM
TO-247GE
1500
Insulated gate bipolar transistor (IGBT) 5μs Short-Circuit Tolerance, 650V 30A, FRD Built in, TO-247GE
Microchip
TO-264-3
1500
Insulated Gate Bipolar Transistor (IGBT) PT MOS 8 Combi 900 V 80 A TO-264
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 75 A TO 264
Microchip
TO-247-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
2000
Insulated Gate Bipolar Transistor (IGBT) PT MOS 7 Single 1200 V 35 A TO-247
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 1200 V 35 A TO 264 MAX
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 100 A TO 264
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) FG, IGBT-CombI, 600V, TO-264 MAX, RoHS
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IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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