sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IXYK120N120C3
Brand:IXYS
Particular Year:24+
Package:TO-264-3
Delivery Date:New and original
Stock: 2000pcs
The IXYK120N120C3 device is manufactured using the most advanced genx 3 IGBT process and an extremely light pass through (XPT) design platform, featuring high current processing capability, high-speed switching capability, low total energy loss and low current drop time. The IGBT has a positive collector-emitter voltage temperature coefficient, allowing designers to use multiple devices in parallel to meet high current requirements.
specification
IGBT type: -
Voltage-emitter breakdown (Max.) : 1200 V
Current - Collector (Ic) (Max.) : 240 A
Current-collector pulse (Icm) : 700 A
Vce(on) (Max.) for different Vge and Ic: 3.2V@15V, 120A
Power - Maximum: 1500 W
Switching power: 6.75mJ (on), 5.1mJ (off)
Input type: Standard
Grid charge: 412 nC
Td (On/off) at 25°C: 35ns/176ns
Test conditions: 600V, 100A, 1ohms, 15V
Operating temperature: -55°C ~ 175°C (TJ)
Installation type: Through hole
Package/case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXYK)
Basic product number: IXYK120
Model
Brand
Package
Quantity
Describe
ROHM
TO-247-3
1000
IGBT with fluted cut-off field 1200 V 50 A 395 W through-hole TO-247N
INFINEON
TO-247-4
1000
IGBT Grooved Field Cutoff 650 V 74 A 250 W Through Hole PG-TO247-4-3
ROHM
TO-247-3
1000
IGBT Trench Type Field Cutoff 650 V 96 A 254 W Through Hole TO-247N
INFINEON
PG-TO247-3
1000
IGBT Grooved field cut-off 650 V 80 A 333 W Through-hole PG-TO247-3
ROHM
TO-3PFM
1000
IGBT Trench Type Field Cutoff 650 V 45 A 94 W Through Hole TO-3PFM
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IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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