sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IXXX160N65B4
Brand:IXYS
Particular Year:24+
Package:TO-247-3
Delivery Date:New and original
Stock: 2000pcs
The IXXX160N65B4 device was developed using IXYS proprietary XPT thin wafer technology and the most advanced slotted IGBT process, featuring low thermal resistance, low power consumption, fast switching, low tail current and high current density. In addition, the device features a square reverse bias safe Working area (RBSOA) and a 650V breakdown voltage, making it ideal for bufferless hard switching applications.
specification
IGBT type: PT
Voltage-emitter breakdown (Max) : 650 V
Current-collector (Ic) (Max.) : 310 A
Current-collector pulse (Icm) : 860 A
Vce(on) (Max.) for different Vge and Ic: 1.8V @ 15V, 160A
Power - Max. : 940 W
Switching energy: 3.3mJ (on), 1.88mJ (off)
Input type: Standard
Grid charge: 425 nC
Td (On/off) value at 25°C: 52ns/220ns
Test conditions: 400V, 80A, 1ohms, 15V
Operating temperature: -55°C ~ 175°C (TJ)
Installation type: Through hole
Package/housing: TO-247-3 variant
Supplier device package: PLUS247™-3
Basic product number: IXXX160
Model
Brand
Package
Quantity
Describe
ROHM
TO-247-3
1000
IGBT with fluted cut-off field 1200 V 50 A 395 W through-hole TO-247N
INFINEON
TO-247-4
1000
IGBT Grooved Field Cutoff 650 V 74 A 250 W Through Hole PG-TO247-4-3
ROHM
TO-247-3
1000
IGBT Trench Type Field Cutoff 650 V 96 A 254 W Through Hole TO-247N
INFINEON
PG-TO247-3
1000
IGBT Grooved field cut-off 650 V 80 A 333 W Through-hole PG-TO247-3
ROHM
TO-3PFM
1000
IGBT Trench Type Field Cutoff 650 V 45 A 94 W Through Hole TO-3PFM
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IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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