sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IXGA30N120B3
Brand:IXYS
Particular Year:24+
Package:TO-263
Delivery Date:New and original
Stock: 1000pcs
IXGA30N120B3 insulated gate bipolar transistor (IGBT) products are manufactured using IXYS 'state-of-the-art GenX3 IGBT process and utilize its advanced through-through (PT) technology to deliver lower saturation voltage, lower switching losses and higher inrush current capabilities.
specification
IGBT type: PT
Voltage-emitter breakdown (Max.) : 1200 V
Current-collector (Ic) (Max.) : 60 A
Current-collector pulse (Icm) : 150 A
Vce(on) (Max.) for different Vge and Ic: 3.5V@15V, 30A
Power - Max: 300 W
Switching energy: 3.47mJ (on), 2.16mJ (off)
Input type: Standard
Grid charge: 87 nC
Td (On/off) value at 25°C: 16ns/127ns
Test conditions: 960V, 30A, 5 ohms, 15V
Operating temperature: -55°C ~ 150°C (TJ)
Mounting type: Surface mount type
Package/housing: TO-263-3, D2PAK (2 leads + flaps), TO-263AB
Supplier device package: TO-263AA
Basic product number: IXGA30
Model
Brand
Package
Quantity
Describe
ROHM
TO-247-3
1000
IGBT with fluted cut-off field 1200 V 50 A 395 W through-hole TO-247N
INFINEON
TO-247-4
1000
IGBT Grooved Field Cutoff 650 V 74 A 250 W Through Hole PG-TO247-4-3
ROHM
TO-247-3
1000
IGBT Trench Type Field Cutoff 650 V 96 A 254 W Through Hole TO-247N
INFINEON
PG-TO247-3
1000
IGBT Grooved field cut-off 650 V 80 A 333 W Through-hole PG-TO247-3
ROHM
TO-3PFM
1000
IGBT Trench Type Field Cutoff 650 V 45 A 94 W Through Hole TO-3PFM
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IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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