sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IXYH20N120C3D1
Brand:IXYS
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Orignal
Stock: 1000pcs
Optimised for low switching losses, the IXYH20N120C3D1 has a square RBSOA, a positive thermal coefficient Vce(sat), and is an anti-parallel ultra-fast diode. Tube avalanche rated international standard package, high power density, low gate drive requirements.
Product Characteristics
Voltage - Collector Breakdown (max): 1200 В
Current - Collector (Ic) (max): 36 A
Collector Current - Collector Pulse (Icm): 88 A
Vce (on) at different Vge, Ic (max): 3.4 V at 15 V, 20 A
Power - max: 230 W
Switching energy: 1.3 mJ (on), 500 µJ (off)
Input type: Standard
Gate charge 53 nK
Td value at 25°C (on/off): 20ns/90ns
Test Conditions 600V, 20A, 10 ohms, 15V
Reverse Recovery Time (trr): 195ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package/Housing: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Applications
● High frequency power inverters
● UPS
● Motor drives
● SMPS
● PFC circuits
● Battery chargers
● Welding machines
● Lamp ballasts
Model
Brand
Package
Quantity
Describe
ROHM
TO-247GE
1500
Insulated gate bipolar transistor (IGBT) 5μs Short-Circuit Tolerance, 650V 30A, FRD Built in, TO-247GE
Microchip
TO-264-3
1500
Insulated Gate Bipolar Transistor (IGBT) PT MOS 8 Combi 900 V 80 A TO-264
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 75 A TO 264
Microchip
TO-247-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
2000
Insulated Gate Bipolar Transistor (IGBT) PT MOS 7 Single 1200 V 35 A TO-247
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 1200 V 35 A TO 264 MAX
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 100 A TO 264
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) FG, IGBT-CombI, 600V, TO-264 MAX, RoHS
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IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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