sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:STGW60H65DFB
Brand:ST
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Original
Stock: 20000pcs
The STGW60H65DFB is a 650 V, 60 A high-speed trench gate field cutoff HB series IGBT. these devices are part of the new HB series of IGBTs, which offer an optimal compromise between conduction and switching losses to maximise the efficiency of any inverter. In addition, a slightly positive VCE (saturation) temperature coefficient and a very tight parameter distribution make parallel operation safer.
Specification
IGBT Type: Trench Field Cutoff
Voltage - Collector Breakdown (max): 650 V
Current - Collector (Ic) (max): 80 A
Current - Collector Pulse (Icm): 240 A
Vce(on) (max) at varying Vge, Ic: 2V @ 15V, 60A
Power - Max: 375 W
Switching Energy: 1.09mJ (On), 626µJ (Off)
Input Type: Standard
Gate Charge: 306 nC
Td (On/Off) at 25°C: 51ns/160ns
Test Conditions: 400V, 60A, 5 Ohm, 15V
Reverse Recovery Time (trr): 60 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package/Housing: TO-247-3
Supplier Device Package: TO-247
Product Features
Maximum Junction Temperature: TJ = 175 °C
High Speed Switch Series
Minimum tail current
Low saturation voltage: VCE(sat) = 1.6 V (typical) @ IC = 60 A
Tight parameter distribution
Safe parallel connection
Positive VCE (saturation) temperature coefficient
Low thermal resistance
Very fast soft recovery reverse parallel diode
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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