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Trade Name:IKW20N60TFKSA1
Brand:INFINEON
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Original
Stock: 2000pcs
The IKW20N60TFKSA1 is a 600 V, 20 A hard-switching TRENCHSTOP™ third-generation IGBT co-packaged with a fully rated continuity diode in a TO-247 package, combining trench gate and field termination concepts to significantly improve device static and dynamic performance.The IGBT is combined with a soft recovery emitter control diode to further reduce turn-on losses. Switching and conduction losses are optimised for maximum efficiency.
Specification
Product Category: IGBT Transistors
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Maximum collector-emitter voltage VCEO: 600 V
Collector-emitter saturation voltage: 1.5 V
Gate/Emitter Maximum Voltage: - 20 V, 20 V
Continuous collector current at 25 C: 41 A
Pd-power dissipation: 166 W
Minimum operating temperature: - 40 C
Maximum operating temperature: + 175 C
Gate-emitter leakage current: 100 nA
Trade Name: TRENCHSTOP
Feature Description
Lowest VCEsat voltage rise for reduced conduction losses
Low switching losses
Positive temperature coefficient of VCEsat for easy parallel switching capability
Very soft, fast recovery anti-parallel emitter control diodes
High robustness and temperature stability
Low EMI emissions
Low gate charge
Very compact parameter distribution
Model
Brand
Package
Quantity
Describe
ST
TO-247-3
3222
IGBT trench field cut-off 650 V 80 A 283 W through hole TO-247 long lead
INFINEON
TO-247-4
1000
650V, 120A IGBT with anti-parallel diode in TO-247-4 package
INFINEON
TO-263-3
1000
IGBT Trench Field Stop 650V 62A 188W Surface Mount PG-TO263-3
INFINEON
TO-263-3
1000
IGBT Trench Field Stop 650V 55A 188W Surface Mount PG-TO263-3
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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