sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistor
Brand:ON
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Original
Stock: 3000pcs
FGY140T120SWD (IGBT Transistor): 1200V, 140A Field Stop VII (FS7) Fast Discrete IGBT in Power TO247-3L Package
Model: FGY140T120SWD
Package: TO-247-3
Type: IGBT Transistor
Overview:
The FGY140T120SWD features novel 7th generation field cutoff IGBT technology and Gen7 diodes in a TP247 3-lead package for optimal performance and low switching and conduction losses for efficient operation in a variety of applications including solar, UPS and ESS.
FGY140T120SWD - Product Specifications:
IGBT Type: Field Cutoff
Voltage - Collector Breakdown (max): 1200 V
Current - Collector (Ic) (max): 280 A
Current - Collector Pulse (Icm): 560 A
Vce(on) at varying Vge, Ic (max): 2V @ 15V, 140A
Power - Max: 1150 W
Switching Energy: 4.7mJ (on), 2.3mJ (off)
Input Type: Standard
Gate Charge: 415.4 nC
Td (on/off) value at 25°C: 59.2ns/249.6ns
Test Conditions: 600V, 140A, 4.7 Ohms, 15V
Reverse Recovery Time (trr): 307.3 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package/Housing: TO-247-3 Variant
Supplier Device Package: TO-247-3
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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