sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:STGF10NB60SD
Brand:ST
Particular Year:24+
Package:TO-220-3
Delivery Date:New and Original
Stock: 12130pcs
The STGF10NB60SD is an IGBT transistor that uses the advanced Power MESH™ process to provide extremely low on-state voltage drop at low frequency operating conditions (up to 1 kHz).
Device attributes
Family: PowerMESH™
Package: Tubes
Voltage - Collector Breakdown (max): 600 V
Current - Collector (Ic) (max): 23 A
Current - Collector Pulse (Icm): 80 A
Vce(on) at varying Vge, Ic (max): 1.75V @ 15V, 10A
Power - Max: 25 W
Switching Energy: 600µJ (on), 5mJ (off)
Input Type: Standard
Gate Charge: 33 nC
Td (On/Off) Value at 25°C: 700ns/1.2µs
Test Conditions: 480V, 10A, 1 kOhm, 15V
Reverse Recovery Time (trr): 37 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package/Housing: TO-220-3 Complete Package
Supplier Device Package: TO-220FP
Applications
Dimmers
Static relays
Motor drives
Model
Brand
Package
Quantity
Describe
ST
TO-247-3
3222
IGBT trench field cut-off 650 V 80 A 283 W through hole TO-247 long lead
INFINEON
TO-247-4
1000
650V, 120A IGBT with anti-parallel diode in TO-247-4 package
INFINEON
TO-263-3
1000
IGBT Trench Field Stop 650V 62A 188W Surface Mount PG-TO263-3
INFINEON
TO-263-3
1000
IGBT Trench Field Stop 650V 55A 188W Surface Mount PG-TO263-3
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This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.Contact Number:86-755-83294757
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