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The LMG342xR030 GaN FETs feature integrated driver and protection features, allowing designers to achieve higher levels of power density and efficiency in power electronics systems.

The LMG342xR030 integrates a silicon driver that enables switching speeds of up to 150 V/ns. TI's integrated precision gate biasing enables higher switching SOA compared to discrete silicon gate drivers. This integrated feature, combined with TI's low-inductance packaging technology, provides clean switching and ultra-low ringing in hard-switched power supply topologies. Adjustable gate drive strength allows slew rate control from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R030 includes an ideal diode mode that reduces third-quadrant losses by enabling adaptive dead-time control.

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies device loading management. Reported faults include overtemperature, overcurrent, and UVLO monitoring.

characteristic

• Compliant with JEDEC JEP180 for hard switching topologies

• 600-V GaN-on-Si FET with integrated gate driver

Integrated high precision gate bias voltage

200V/ns CMTI

2.2MHz switching frequency

30 V/ns to 150 V/ns slew rate for optimized switching performance and EMI mitigation

Operates from 7.5V to 18V Supply

• Strong protection

Cycle-by-cycle overcurrent and latched short-circuit protection with less than 100 ns response time

Withstands 720V surge when hard switching

Self-protection against internal overtemperature and UVLO monitoring

• Advanced Power Management

Digital temperature PWM output

Ideal Diode Mode Reduces Third Quadrant Losses in LMG3425R030、

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