sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GaN IC
Brand:TI
Particular Year:24+
Package:52-VQFN
Delivery Date:New and original
Stock: 2222pcs
The LMG3522R050RQSR GaN FET features integrated driver, protection and temperature reporting for switch-mode power converters, allowing designers to achieve higher levels of power density and efficiency.
Product attribute
Switch type: Universal
Output number: 1
Ratio - Input: Output: 1:1
Output configuration: Low end
Output type: P channel
Interface: PWM
Voltage - load: 650V
Voltage - power supply (Vcc/Vdd) : 7.5V ~ 18V
Current - Output (Max.) : 32A
On-resistance (typical) : 43 milliohm
Input type: non-inverting
Characteristics: pressure swing rate controlled type, status sign
Fault protection: Current limiting (adjustable), overtemperature, short circuit, UVLO
Operating temperature: -40°C ~ 150°C (TJ)
Mounting type: Surface mount, wets flanks
Supplier Package: 52-VQFN (12x12)
Package/housing: 52-VQFN bare pad
Model
Brand
Package
Quantity
Describe
TI
52-VQFN
2222
650V 50mΩ GaN FET with integrated driver, protection and zero voltage detection reporting
ST
31-QFN
2000
High power density 6.5A half-bridge drivers with two enhanced GaN HEMTs, 31QFN
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