sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NV6132A-RA
Data Manual:NV6132A-RA.pdf
Brand:Navitas
Particular Year:23+
Package:30-QFN
Delivery Date:New and Original
Stock: 1000pcs
NV6132A-RA This GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation. GaNSense™ technology is also integrated which enables real-time, accurate sensing of voltage, current and temperature to further improve performance and robustness not achieved by any discrete GaN or discrete silicon device.
Features
GaNFast™ Power IC
• Monolithically-integrated gate drive
• Wide VCC range (10 to 30 V)
• Programmable turn-on dV/dt
• 200 V/ns dV/dt immunity
• 800 V Transient Voltage Rating
• 700 V Continuous Voltage Rating
• Low 450 mΩ resistance
• Zero reverse recovery charge
• 2 MHz operation
GaNSense™ Technology
• Integrated loss-less current sensing
• Short-circuit protection
• Over-temperature protection
• Autonomous low-current standby mode
• Auto-standby mode input
Applications
• AC-DC, DC-DC, DC-AC
• High frequency operation up to 2 MHz
• QR flyback, AHB, Buck, Boost, Half bridge, Full bridge, LLC resonant, Class D, PFC
• Wireless power, Solar Micro-inverters
Model
Brand
Package
Quantity
Describe
TI
52-VQFN
2222
650V 50mΩ GaN FET with integrated drive, protection and temperature reporting
TI
52-VQFN
2222
650V 50mΩ GaN FET with integrated driver, protection and zero voltage detection reporting
ST
31-QFN
2000
High power density 6.5A half-bridge drivers with two enhanced GaN HEMTs, 31QFN
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Founded in 2014, Navitas Semiconductor focuses on developing ultra-efficient gallium nitride semiconductor products. In January 2022, NanoMicro announced the opening of a new electric vehicle (EV) design center, further expanding into the higher power…
NV6115-RA
The NV6115-RA chip has a lead resistance of 170mΩ, withstanding voltage of 650V, supports 2MHz switching frequency, and is available in a 5*6mm QFN package for area saving. Thanks to the NV6115s built-in driver, no external driver is required, which …NV6117-RA
This NV6117-RA GaNFast power integrated circuit is optimized for high frequency soft-switching topologies. Monolithic integration of field-effect transistors, drivers and logic creates an easy-to-use "digital-in, power-out" high-performance …NV6152-RA
NV6152-RA This GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation.Product FeaturesGaNFast™ Power IC• Monolithically-integrated gate drive•NV6153-RA
NV6153-RA GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation.FeaturesMonolithically-integrated gate driveWide VCC range (10 to 30 V)Programmab…NV6158
NV6158 GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation.FeaturesMonolithically-integrated gate driveWide VCC range (10 to 30 V)Programmable …NV6113-RA
The NV6113-RA integrated circuit targets high-frequency soft-switching topologies. Monolithic integration of field-effect transistors, drivers and logic creates easy-to-use "digital-in, power-out" high-performance powertrain building blocks …Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: