sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GaN half-bridge driver
Brand:ST
Particular Year:24+
Package:31-QFN
Delivery Date:New and original
Stock: 2222pcs
The MASTERGAN1TR GaN half-bridge high voltage driver uses a high power density power supply and integrates a gate driver and two enhanced mode GaN transistors in a half-bridge configuration. The integrated power shunt has 150mΩ RDS(ON) and 650V drain-source breakdown voltage. An integrated bootstrap diode can quickly power the high side of an embedded gate driver.
Product attribute
Output configuration: Half bridge
Application: General purpose
Interface: -
Load type: capacitive, inductive
Technology: DMOS
On-resistance (typical) : 150 milliohm
Current - Output/channel: 10A
Current - Peak output: 17A
Voltage - Power supply: 4.75V ~ 9.5V
Voltage - Load: 600V (Max)
Operating temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap circuit
Fault protection: Overtemperature, UVLO
Mounting type: Surface mount type
Package/housing: 31-VQFN bare pad
Supplier Package: 31-QFN (9x9)
Model
Brand
Package
Quantity
Describe
TI
52-VQFN
2222
650V 50mΩ GaN FET with integrated drive, protection and temperature reporting
TI
52-VQFN
2222
650V 50mΩ GaN FET with integrated driver, protection and zero voltage detection reporting
ST
31-QFN
2000
High power density 6.5A half-bridge drivers with two enhanced GaN HEMTs, 31QFN
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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