sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:MASTERGAN4
Data Manual:MASTERGAN4.pdf
Brand:ST
Particular Year:23+
Package:31-QFN
Delivery Date:New original
Stock: 2000pcs
MASTERGAN4 is an advanced power system-level package that integrates a gate driver and two enhanced GaN power transistors in a half-bridge configuration. The integrated power supply GAN has a 650 V drain-source blocking voltage and 225 mΩ RDS (ON), while the high-end of the embedded gate driver is easily powered by an integrated bootstrap diode. The device has UVLO protection in both the lower and higher drive sections to prevent the power switch from operating under inefficient or dangerous conditions, and interlocking to avoid cross-conduction conditions.
Product Attributes:
Output configuration: Half bridge
Application: General purpose
Interface: Logic
Load type: capacitive and resistive
Technology: -
On-resistance (typical) : 225 milliohm LS, 225 milliohm HS
Current - Output/channel: 6.5A
Current - Peak output: 6.5A
Voltage - Power supply: 3.3V ~ 15V
Voltage - load: 3.3V ~ 15V
Operating temperature: -40°C ~ 125°C
Features: Bootstrap circuit
Fault protection: Overtemperature, UVLO
Mounting type: Surface mount type
Package/housing: 31-VQFN bare pad
Supplier Package: 31-QFN (9x9)
Model
Brand
Package
Quantity
Describe
TI
52-VQFN
2222
650V 50mΩ GaN FET with integrated drive, protection and temperature reporting
TI
52-VQFN
2222
650V 50mΩ GaN FET with integrated driver, protection and zero voltage detection reporting
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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