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The NTBG070N120M3S 1200V M3S series SiC (Silicon Carbide) MOSFETs are optimized for fast switching applications and offer a low 22mΩ drain-source on-resistance. The M3S series SiC MOSFETs offer optimal performance when driven by an 18V gate drive, but can also be used with a 15V gate drive. The device uses planar technology to operate reliably when the grid is at a negative grid voltage drive and turn-off peak.

specification

FET type: N channel

Technology: SiC (Silicon carbide junction transistor)

Drain-source voltage (Vdss) : 1200 V

Current at 25°C - Continuous Drain (Id) : 36A (Tc)

Drive voltage (Max Rds On, min Rds On) : 18V

On-resistance (Max.) at different ids and Vgs: 87 milliohm @ 15A, 18V

Vgs(th) (Max.) : 4.4V@7mA for different ids

Gate charge (Qg) at different Vgs (Max.) : 57 NC-@18 V

Vgs (Max) : +22V, -10V

Input capacitance (Ciss) at different Vds (Max.) : 1230 PF-@800 V

FET function: -

Power dissipation (Max.) : 172W (Tc)

Operating temperature: -55°C ~ 175°C (TJ)

Mounting type: Surface mount type

Supplier device package: D2PAK-7

Package/housing: TO-263-8, D2PAK (7-lead + flange), TO-263CA

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