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The HMC606LC5TR is a gallium arsenide (GaAs), indium gallium phosphide (InGaP), heterojunction bipolar transistor (HBT), monolithic microwave integrated circuit (MMIC) distributed amplifier in a 32-terminal, ceramic, leadless chip carrier (LCC) package that operates from 2 GHz to 18 GHz. The amplifier has an input signal frequency of 12 GHz and an ultra-low phase noise performance of -160 dBc/Hz at 10 kHz offset. The amplifier has an input signal frequency of 12 GHz and ultra-low phase noise performance of -160 dBc/Hz at 10 kHz offset, a significant improvement over field-effect transistor (FET)-based distributed amplifiers.

The HMC606LC5TR has a small-signal gain of 13.5 dB, an output IP3 of 27 dBm, 1 dB compressed output power of 15 dBm, and a 5.0 V supply current of 64 mA. The HMC606LC5 amplifiers are internally matched to the inputs and outputs at 50 Ω, with internal DC blocking.

Features

Ultra-low phase noise: -160 dBc/Hz typical at 10 kHz

1 dB compressed output power (P1dB): 15 dBm typical

Over 2 GHz to 12 GHz frequency range

Gain: 13.5 dB typical over the 2 GHz to 12 GHz frequency range

Output third-order intercept (IP3): 27 dBm typical over the 2 GHz to 12 GHz frequency range

Typical over the frequency range to 12 GHz

Supply voltage: 5.0 V, 64 mA typical

50 Ω matched input/output

32-terminal, ceramic, leadless chip carrier (LCC)

Applications

Radar, Electronic Warfare (EW) and Electronic Countermeasures (ECM)

Microwave Radio

Test Instruments

Military and aerospace

Fibre Optic Systems

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