sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IXYH40N120C4H1
Data Manual:IXYH40N120C4H1.pdf
Brand:IXYS
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
Developed using our proprietary XPT™ thin wafer technology and state-of-the-art Trench IGBT process, the IXYH40N120C4H1 features low thermal resistance, low energy loss, fast switching speeds, low tail currents and high current density. High current handling capability, high power density and reverse parallel sonic diodes. These trench XPT transistors are ideally suited for use in power inverters, motor drives, power factor correction (PFC) circuits, and battery charger applications.
Product Attributes
IGBT Type: Trench
Voltage - Collector Breakdown (Max): 1200 V
Current - Collector (Ic) (max): 110 A
Current - collector pulse (Icm): 230 A
Vce(on) at varying Vge, Ic (max): 2.5V @ 15V, 32A
Power - Max: 680 W
Switching Energy: 5.55 mJ (on), 1.55 mJ (off)
Input Type: Standard
Gate Charge: 92 nC
Td (on/off) value at 25°C: 21ns/140ns
Test Conditions: 960V, 32A, 5 Ohm, 15V
Reverse Recovery Time (trr): 380 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package/Housing: TO-247-3
Supplier Device Package: TO-247 (IXYH)
Applications
● Power inverters
● Motor drives
● Uninterruptible power supplies (UPS)
● Switch-mode power supplies (SMPS)
● PFC circuits
● Battery chargers
● Welding machines
Model
Brand
Package
Quantity
Describe
ROHM
TO-247GE
1500
Insulated gate bipolar transistor (IGBT) 5μs Short-Circuit Tolerance, 650V 30A, FRD Built in, TO-247GE
Microchip
TO-264-3
1500
Insulated Gate Bipolar Transistor (IGBT) PT MOS 8 Combi 900 V 80 A TO-264
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 75 A TO 264
Microchip
TO-247-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
2000
Insulated Gate Bipolar Transistor (IGBT) PT MOS 7 Single 1200 V 35 A TO-247
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 1200 V 35 A TO 264 MAX
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 100 A TO 264
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) FG, IGBT-CombI, 600V, TO-264 MAX, RoHS
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IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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