sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:FGA40N65SMD
Data Manual:FGA40N65SMD.pdf
Brand:ON
Particular Year:23+
Package:TO-3P
Delivery Date:New and Original
Stock: 7500pcs
ON Semiconductor's FGA40N65SMD new field cutoff Generation 2 IGBT features new field cutoff IGBT technology for applications where low conduction and switching losses are critical, such as solar inverters, UPS, welding machines, inductive heating, telecommunications, ESS and PFC.
Properties
IGBT type: Field cut-off
Voltage - Collector breakdown (max.): 650 V
Current - Collector (Ic) (max.): 80 A
Current - collector pulse (Icm): 120 A
Vce(on) at different Vge, Ic (max): 2.5V @ 15V, 40A
Power - max. value: 349 W
Switching energy: 820µJ (on), 260µJ (off)
Input type: Standard
Gate charge: 119 nC
Td (on/off) value at 25°C: 12ns/92ns
Test conditions: 400V, 40A, 6 ohms, 15V
Reverse recovery time (trr): 42 ns
Operating temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package/Housing: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Basic part number: FGA40N65
Applications
- Power generation and distribution
- Uninterruptible power supplies
- Other industrial
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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