sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:AFGY120T65SPD
Data Manual:AFGY120T65SPD.pdf
Brand:ON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
The AFGY120T65SPD field terminated trench IGBT is AEC-Q101 compliant and has extremely low conduction and switching losses. These features enable high efficiency operation in a variety of applications with excellent transient reliability and low EMI.
ON Semiconductor AFGY120T65SPD IGBTs offer advantages such as excellent parallel operation performance and balanced current sharing. In addition, the AFGY120T65SPD IGBT offers tight parameter distribution, high input impedance and short circuit tolerance.
Features
-AEC-Q101 qualified and PPAP capable
-Very low saturation voltage: VCE (sat) = 1.5 V (typical) @ IC = 120 A
-Maximum junction temperature: TJ=175°C
-Positive temperature synergy
-Tight parameter distribution
-High input impedance
-100% of parts dynamically tested
-Short circuit robustness >6 s@25°C
-Co-packaged with soft, fast recovery limiting diodes
-The device is Pb- free, halogen/ BFR free and RoHS compliant
Advantages
-Extremely low conduction and switching losses for efficient operation in a wide range of applications
-Rugged transient reliability
-Excellent parallel operation with balanced current equalisation
-Low EMI
Applications
-HEV/EV traction inverters
-Auxiliary DC/AC converters
-Motor drives
-Other drivetrain applications requiring high power switching
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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